BSH112-01 NXP Semiconductors, BSH112-01 Datasheet - Page 6

• Manufacturer Part Number: BSH112-01
• Description: Bsh112 N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 07305
Product specification
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
T
T
j
j
= 25 C
= 25 C
function of drain-source voltage; typical values.
R DSon
of drain current; typical values.
(A)
I D
( )
0.45
0.35
0.25
0.15
0.05
0.5
0.4
0.3
0.2
0.1
10
9
8
7
6
5
4
3
2
1
0
0
0
0
0.2 0.4 0.6 0.8
Tj = 25 o C
0.1
3.5V
0.2
4 V
1
1.2 1.4 1.6 1.8
0.3
4.5 V
T j = 25 o C
V GS = 10V
V GS = 10V
0.4
V DS (V)
I D (A)
03aa42
4.5 V
3.5 V
03aa41
4 V
3 V
Rev. 01 — 25 August 2000
0.5
2
N-channel enhancement mode field-effect transistor
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
T
a
j
=
= 25 C and 150 C; V
function of gate-source voltage; typical values.
factor as a function of junction temperature.
(A)
I D
--------------------------- -
R
a
DSon 25 C
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
R
0.45
0.35
0.25
0.15
0.05
2
1
0
0.5
0.4
0.3
0.2
0.1
DSon
-60
0
0
V DS > I D X R DSon
1
-20
2
T j = 25 o C
20
3
DS
4
60
I
D
5
© Philips Electronics N.V. 2000. All rights reserved.
R
150 o C
100
6
DSon
7
140
T
BSH112
8
j
V GS (V)
(
03aa28
o
C)
03aa43
9
180
10
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