BSH112-01 NXP Semiconductors, BSH112-01 Datasheet - Page 8
BSH112-01
Manufacturer Part Number
BSH112-01
Description
Bsh112 N-channel Enhancement Mode Field-effect Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.BSH112-01.pdf
(13 pages)
Philips Semiconductors
9397 750 07305
Product specification
Fig 13. Source (diode forward) current as a function of source-drain (diode forward)
T
j
= 25 C and 150 C; V
voltage; typical values.
Rev. 01 — 25 August 2000
(A)
I S
GS
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
0
= 0 V
0
N-channel enhancement mode field-effect transistor
0.2
V GS = 0 V
0.4
0.6
150 o C
0.8
1
T j = 25 o C
1.2
V SD (V)
1.4
03aa45
1.6
© Philips Electronics N.V. 2000. All rights reserved.
BSH112
8 of 13
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