BSH112-01 NXP Semiconductors, BSH112-01 Datasheet - Page 5

• Manufacturer Part Number: BSH112-01
• Description: Bsh112 N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

8. Characteristics
Table 5:
T
Philips Semiconductors
9397 750 07305
Product specification
Symbol
Static characteristics
V
V
V
I
I
R
Dynamic characteristics
g
C
C
C
t
t
Source-drain diode
V
t
Q
DSS
GSS
on
off
rr
j
fs
(BR)DSS
(BR)GSS
GS(th)
SD
DSon
iss
oss
rss
r
= 25 C unless otherwise specified
Characteristics
Parameter
drain-source breakdown
voltage
gate-source breakdown
voltage
gate-source threshold voltage I
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
forward transconductance
input capacitance
output capacitance
reverse transfer capacitance
turn-on time
turn-off time
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
Conditions
I
I
Figure 9
V
V
V
Figure 7
V
Figure 7
V
Figure 11
V
f = 1 MHz;
V
V
R
I
Figure 13
I
dI
V
D
G
D
S
S
DS
GS
GS
GS
DS
GS
DD
GS
GS
GS
S
T
T
T
T
T
T
T
T
T
T
= 10 A; V
= 1 mA; V
= 300 mA; V
= 300 mA;
= 1 mA; V
/dt = 100 A/ s;
j
j
j
j
j
j
j
j
j
j
= 48 V; V
= 10 V; I
= 25 C
= 55 C
= 25 C
= 150 C
= 55 C
= 25 C
= 150 C
= 10 V; V
= 10 V; I
= 25 C
= 150 C
= 4.5 V; I
= 25 C
= 0 V; V
= 50 V; R
= 10 V; R
= 0 V; V
= 50
Rev. 01 — 25 August 2000
and
and
Figure 12
DS
DS
DS
D
D
GS
8
8
D
GS
DS
D
G
= 200 mA;
= 500 mA;
GS
DS
= V
= 75 mA;
= 10 V;
= 25 V
= 250 ;
= 50 ;
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V;
N-channel enhancement mode field-effect transistor
GS
;
Min
60
55
16
1
0.6
100
Typ
75
22
2
0.01
50
2.8
3.8
300
13
8
4
3
9
0.85
30
30
© Philips Electronics N.V. 2000. All rights reserved.
Max
3.5
1.0
10
500
5
9.25
5.3
40
30
10
10
15
1.5
BSH112
Unit
V
V
V
V
V
V
nA
mS
pF
pF
pF
ns
ns
V
ns
nC
5 of 13
A
A