BSH112-01 NXP Semiconductors, BSH112-01 Datasheet - Page 3

• Manufacturer Part Number: BSH112-01
• Description: Bsh112 N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 07305
Product specification
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
P
sp
der
= 25 C; I
function of solder point temperature.
P
=
(%)
120
der
100
80
60
40
20
0
----------------------
P
tot 25 C
0
P
tot
DM
25
is single pulse.
100%
50
10 -2
(A)
10 -1
I D
10
1
1
75
T sp = 25 o C
100
125
T sp (
R DSon = V DS / I D
150
o
C)
03aa17
175
Rev. 01 — 25 August 2000
N-channel enhancement mode field-effect transistor
10
D.C.
Fig 2. Normalized continuous drain current as a
V
I
der
GS
function of solder point temperature.
(%)
=
I der
4.5 V
------------------ -
I
120
100
D 25 C
80
60
40
20
0
I
D
0
25
100%
V DS (V)
50
t p = 10 s
100 s
1 ms
10 ms
100 ms
75
03aa40
© Philips Electronics N.V. 2000. All rights reserved.
10 2
100
125
T sp ( o C)
BSH112
150
03aa25
175
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