BSH112-01 NXP Semiconductors, BSH112-01 Datasheet - Page 7

• Manufacturer Part Number: BSH112-01
• Description: Bsh112 N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 07305
Product specification
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
I
T
D
j
= 25 C and 150 C; V
= 1 mA; V
V GS(th)
junction temperature.
drain current; typical values.
g fs
(S)
(V)
0.25
0.15
0.05
0.3
0.2
0.1
2.5
1.5
0.5
0
3
2
1
0
-60
0
DS
V DS > I D X R DSon
= V
-20
0.1
GS
DS
20
0.2
min
typ
I
D
60
0.3
R
DSon
100
T j = 25 o C
0.4
150 o C
T j ( o C)
140
I D (A)
03aa44
03aa34
0.5
Rev. 01 — 25 August 2000
180
N-channel enhancement mode field-effect transistor
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
T
V
j
GS
= 25 C; V
C iss , C oss ,
gate-source voltage.
as a function of drain-source voltage; typical
values.
= 0 V; f = 1 MHz
C rss (pF)
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
(A)
I
D
10 2
10
0
1
10 -1
DS
= 5 V
0.5
1
min
1
1.5
© Philips Electronics N.V. 2000. All rights reserved.
2
10
typ
V GS (V)
2.5
V DS (V)
BSH112
03aa37
C oss
C iss
03aa46
C rss
3
10 2
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