BSH112-01 NXP Semiconductors, BSH112-01 Datasheet - Page 4

• Manufacturer Part Number: BSH112-01
• Description: Bsh112 N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

7. Thermal characteristics
Table 4:
Philips Semiconductors
9397 750 07305
Product specification
Symbol
R
R
th(j-sp)
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to solder
point
thermal resistance from junction to ambient
7.1 Transient thermal impedance
Fig 4. Transient thermal impedance from junction to solder point as a function of
Mounted on a metal clad substrate.
Z th(j-sp)
pulse duration.
(K/W)
10 3
10 2
10
1
10 -5
0.2
0.1
0.05
0.02
= 0.5
Rev. 01 — 25 August 2000
single pulse
10 -4
Conditions
mounted on a metal clad substrate;
Figure 4
mounted on a printed circuit board;
minimum footprint
N-channel enhancement mode field-effect transistor
10 -3
10 -2
10 -1
© Philips Electronics N.V. 2000. All rights reserved.
P
Value
150
350
1
t p
T
BSH112
t p (s)
=
03aa39
t p
T
t
Unit
K/W
K/W
10
4 of 13