APT18M100B Microsemi Power Products Group, APT18M100B Datasheet - Page 4

• Manufacturer Part Number: APT18M100B
• Description: MOSFET N-CH 1000V 18A TO-247
• Manufacturer: Microsemi Power Products Group

Specifications of APT18M100B

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 700 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 4845pF @ 25V
• Power - Max: 625W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT18M100BMI; APT18M100BMI

Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
0.25
0.20
0.15
0.10
0.05
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
100
0.1
10
1
0
10
1
Dimensions in Millimeters and (Inches)
T
-5
T
Figure 9, Forward Safe Operating Area
J
V
C
=
DS
=
125°C
20.80 (.819)
21.46 (.845)
19.81 (.780)
20.32 (.800)
R ds(on)
I
75°C
, DRAIN-TO-SOURCE VOLTAGE (V)
DM
D = 0.9
TO-247 (B) Package Outline
6.15 (.242) BSC
0.7
0.3
0.1
4.50 (.177) Max.
0.5
0.05
1.01 (.040)
1.40 (.055)
10
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
5.45 (.215) BSC
13µs
2-Plcs.
100µs
10ms
100ms
1ms
DC line
10
15.49 (.610)
16.26 (.640)
-4
100
5.38 (.212)
6.20 (.244)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
RECTANGULAR PULSE DURATION (seconds)
1000
10
SINGLE PULSE
-3
e3 100% Sn Plated
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
0.46 (.018)
0.56 (.022)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
10
100
0.1
10
Figure 10, Maximum Forward Safe Operating Area
-2
1
1
{3 Plcs}
Scaling for Different Case & Junction
Temperatures:
T
T
V
R ds(on)
J
C
I
1.22 (.048)
1.32 (.052)
D
DS
=
=
=
I
150°C
D
DM
, DRAIN-TO-SOURCE VOLTAGE (V)
25°C
I
D(T
Dimensions in Millimeters (Inches)
3
PAK Package Outline
C
= 25
Note:
10
Peak T J = P DM x Z θJC + T C
15.95 (.628)
16.05(.632)
°
Revised
C)
4/18/95
Duty Factor D =
*(
t
1
13µs
10
T
100µs
J
= Pulse Duration
10ms
1ms
100ms
-1
-
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
t 1
DC line
T
Gate
C
)/125
13.79 (.543)
13.99(.551)
Drain
t 2
100
Source
1.04 (.041)
1.15(.045)
1.27 (.050)
1.40 (.055)
t 1
/
t 2
APT18M100B_S
13.41 (.528)
13.51(.532)
1000
1.0
Revised
8/29/97
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
11.51 (.453)
11.61 (.457)