STB12NM60N STMicroelectronics, STB12NM60N Datasheet - Page 15

• Manufacturer Part Number: STB12NM60N
• Description: MOSFET N-CH 600V 10A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB12NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 410 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 960pF @ 50V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.41 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 10 A
• Power Dissipation: 90000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7931-2; STB12NM60N

STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
DIM.
A1
øP
øR
b1
b2
L1
L2
A
b
D
E
e
L
S
c
19.85
15.45
14.20
4.85
2.20
0.40
3.70
3.55
4.50
MIN.
1.0
2.0
3.0
TO-247 MECHANICAL DATA
18.50
5.45
5.50
mm.
TYP
20.15
15.75
14.80
MAX.
5.15
2.60
1.40
2.40
3.40
0.80
4.30
3.65
5.50
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.560
0.140
0.177
0.19
0.14
MIN.
Package mechanical data
0.214
0.728
0.216
TYP.
inch
0.102
0.055
0.094
0.134
0.793
0.620
0.582
0.143
0.216
MAX.
0.20
0.03
0.17
15/18