STB12NM60N STMicroelectronics, STB12NM60N Datasheet - Page 7

• Manufacturer Part Number: STB12NM60N
• Description: MOSFET N-CH 600V 10A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB12NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 410 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 960pF @ 50V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.41 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 10 A
• Power Dissipation: 90000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7931-2; STB12NM60N

STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
Figure 7.
Figure 9.
Figure 11. Gate charge vs. gate-source
Output characteristics
Transconductance
voltage
Figure 8.
Figure 10. Static drain-source on resistance
Figure 12. Capacitance variations
Transfer characteristics
Electrical characteristics
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