STB12NM60N STMicroelectronics, STB12NM60N Datasheet - Page 5

MOSFET N-CH 600V 10A D2PAK

STB12NM60N

Manufacturer Part Number
STB12NM60N
Description
MOSFET N-CH 600V 10A D2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STB12NM60N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
410 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
30.5nC @ 10V
Input Capacitance (ciss) @ Vds
960pF @ 50V
Power - Max
90W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.41 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
10 A
Power Dissipation
90000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7931-2
STB12NM60N

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB12NM60N
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB12NM60N
Manufacturer:
ST
0
Part Number:
STB12NM60N-1
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB12NM60N-1
Manufacturer:
ST
0
Part Number:
STB12NM60NT4
Manufacturer:
ST
0
STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2.
Symbol
Symbol
I
SDM
V
t
t
I
I
d(on)
d(off)
Pulsed: pulse duration = 300µs, duty cycle 1.5%
RRM
RRM
I
SD
Q
Q
t
t
SD
t
t
r
f
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
V
R
(see Figure 17)
I
I
V
(see Figure 19)
V
di/dt =100A/µs, I
Tj = 150°C
SD
SD
DD
DD
DD
G
= 4.7Ω, V
=10A, di/dt =100A/µs,
= 10A, V
= 300V, I
= 100V
= 100V, Tj = 25°C
Test conditions
Test conditions
(see Figure 19)
GS
D
GS
=0
= 5A,
SD
= 10V
= 10A
Electrical characteristics
Min
Min
5.20
Typ
360
530
Typ
3.5
20
20
15
60
10
9
Max
Max Unit
1.3
10
40
Unit
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
5/18

Related parts for STB12NM60N