STB12NM60N STMicroelectronics, STB12NM60N Datasheet - Page 4

• Manufacturer Part Number: STB12NM60N
• Description: MOSFET N-CH 600V 10A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB12NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 410 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 960pF @ 50V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.41 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 10 A
• Power Dissipation: 90000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7931-2; STB12NM60N

Electrical characteristics
2
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Electrical characteristics
(T
Table 4.
1.
Table 5.
1.
2. C
C
V
Symbol
Symbol
R
dv/dt
CASE
V
oss eq.
(BR)DSS
g
C
I
I
C
increases from 0 to 80% V
DS(on)
C
Q
GS(th)
Q
Characteristics value at turn off on inductive load
Pulsed: pulse duration = 300µs, duty cycle 1.5%
DSS
GSS
Rg
Q
fs
oss
oss eq.
iss
rss
gs
gd
(1)
g
(1)
=25°C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Drain-source voltage slope
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
DSS
V
V
V
V
f=1MHz Gate DC Bias=0
Test signal level=20mV
open drain
V
V
(see Figure 18)
I
V
V
V
V
V
V
V
D
GS
GS
GS
DS
DS
DD
GS
GS
GS
DD
DS
DS
DS
= 1mA, V
= V
= 10V, I
=15V, I
= 50V, f =1MHz,
= 0
= 0, V
= 10V
= 480V, I
= Max rating,
= ±20V
= 10V
= Max rating,@125°C
= 400V,I
Test conditions
Test conditions
GS
, I
DS
D
GS
D
D
D
= 5A
D
= 0V to 480V
= 250µA
= 5A
= 0
= 10A,
= 10A
Min.
600
Min.
2
Typ.
0.35
Typ.
30.5
960
180
41
65
16
3
8
7
5
5
oss
Max.
Max.
0.41
100
when V
10
1
4
DS
V/ns
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
pF
V
V
Ω
S
Ω