STB12NM60N STMicroelectronics, STB12NM60N Datasheet - Page 16

• Manufacturer Part Number: STB12NM60N
• Description: MOSFET N-CH 600V 10A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB12NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 410 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 960pF @ 50V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.41 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 10 A
• Power Dissipation: 90000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7931-2; STB12NM60N

Packaging mechanical data
5
16/18
* on sales type
DIM.
Packaging mechanical data
D1
A0
B0
K0
P0
P1
P2
W
D
R
E
F
T
TAPE MECHANICAL DATA
MIN.
10.5
15.7
1.59
1.65
11.4
0.25
23.7
11.9
1.5
4.8
3.9
1.9
50
D
2
mm
PAK FOOTPRINT
MAX.
10.7
15.9
1.61
1.85
11.6
12.1
0.35 0.0098 0.0137
24.3
1.6
5.0
4.1
2.1
0.413 0.421
0.618 0.626
0.059 0.063
0.062 0.063
0.065 0.073
0.449 0.456
0.189 0.197
0.153 0.161
0.468 0.476
0.075 0.082
1.574
0.933 0.956
MIN.
inch
TAPE AND REEL SHIPMENT
STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
MAX.
DIM.
G
A
B
C
D
N
T
BASE QTY
REEL MECHANICAL DATA
1000
MIN.
12.8
20.2
24.4
100
1.5
mm
MAX.
13.2
26.4
30.4
330
BULK QTY
0.059
0.504 0.520
0.960 1.039
3.937
0795
MIN.
1000
inch
12.992
MAX.
1.197