STB21NM50N STMicroelectronics, STB21NM50N Datasheet - Page 16

• Manufacturer Part Number: STB21NM50N
• Description: MOSFET N-CH 500V 18A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB21NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 1950pF @ 25V
• Power - Max: 140W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 18 A
• Power Dissipation: 140 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5783-2; STB21NM50N

Packing mechanical data
5
16/18
Packing mechanical data
* on sales type
DIM.
A0
B0
D1
K0
P0
P1
P2
W
D
E
R
F
T
TAPE MECHANICAL DATA
MIN.
10.5
15.7
1.59
1.65
0.25
23.7
11.4
11.9
1.5
4.8
3.9
1.9
50
D
2
mm
PAK FOOTPRINT
MAX.
10.7
15.9
1.61
1.85
12.1
0.35 0.0098 0.0137
24.3
11.6
1.6
5.0
4.1
2.1
STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
0.413 0.421
0.618 0.626
0.059 0.063
0.062 0.063
0.065 0.073
0.449 0.456
0.189 0.197
0.153 0.161
0.468 0.476
0.075 0.082
1.574
0.933 0.956
MIN.
inch
TAPE AND REEL SHIPMENT
MAX.
DIM.
A
B
C
D
G
N
T
BASE QTY
REEL MECHANICAL DATA
1000
MIN.
12.8
20.2
24.4
100
1.5
mm
MAX.
13.2
26.4
30.4
330
BULK QTY
0.059
0.504 0.520
0.960 1.039
3.937
0795
MIN.
1000
inch
12.992
MAX.
1.197