STB21NM50N STMicroelectronics, STB21NM50N Datasheet - Page 3
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STB21NM50N
Manufacturer Part Number
STB21NM50N
Description
MOSFET N-CH 500V 18A D2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STB21NM50N.pdf
(18 pages)
Specifications of STB21NM50N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
1950pF @ 25V
Power - Max
140W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.19 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
18 A
Power Dissipation
140 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5783-2
STB21NM50N
STB21NM50N
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB21NM50N-1
Manufacturer:
STMicroelectronics
Quantity:
1 973
Company:
Part Number:
STB21NM50N-1
Manufacturer:
ST
Quantity:
12 500
STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
1
Electrical ratings
Table 1.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3.
Table 2.
Table 3.
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Symbol
Symbol
Symbol
dv/dt
I
I
E
DM
P
Viso
SD
I
V
V
T
T
AS
TOT
AS
I
I
T
GS
DS
stg
D
D
l
j
≤ 18 A, di/dt ≤ 400 A/µs, V
(2)
(3)
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
Absolute maximum ratings
Thermal data
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1s;T
Storage temperature
Max. operating junction temperature
Avalanche characteristics
C
=25°C)
j
= 25°C, I
DD
Parameter
Parameter
Parameter
=80% V
D
C
= I
= 25°C
j
AR
GS
max)
(BR)DSS
, V
= 0)
DD
C
C
= 50V)
= 25°C
= 100°C
TO-220/ D
I
TO-220/D²PAK/
I²PAK / TO-247
2
PAK/TO-247
1.12
140
18
11
72
0.89
--
–55 to 150
2
Max value
PAK/
Value
±25
500
150
15
62.5
300
480
9
TO-220FP
TO-220FP
Electrical ratings
2500
18
11
72
0.23
4.21
30
(1)
(1)
(1)
W/°C
°C/W
°C/W
Unit
V/ns
Unit
Unit
°C
W
°C
mJ
V
V
A
A
A
V
A
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