STB21NM50N STMicroelectronics, STB21NM50N Datasheet - Page 9
![MOSFET N-CH 500V 18A D2PAK](/photos/1/39/13904/d2pak_sml.jpg)
STB21NM50N
Manufacturer Part Number
STB21NM50N
Description
MOSFET N-CH 500V 18A D2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STB21NM50N.pdf
(18 pages)
Specifications of STB21NM50N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
1950pF @ 25V
Power - Max
140W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.19 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
18 A
Power Dissipation
140 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5783-2
STB21NM50N
STB21NM50N
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB21NM50N-1
Manufacturer:
STMicroelectronics
Quantity:
1 973
Company:
Part Number:
STB21NM50N-1
Manufacturer:
ST
Quantity:
12 500
STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
3
Figure 15. Switching times test circuit for
Figure 17. Test circuit for inductive load
Figure 19. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuit
Figure 16. Gate charge test circuit
Figure 18. Unclamped Inductive load test
Figure 20. Switching time waveform
circuit
Test circuit
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