STB21NM50N STMicroelectronics, STB21NM50N Datasheet - Page 4
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STB21NM50N
Manufacturer Part Number
STB21NM50N
Description
MOSFET N-CH 500V 18A D2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STB21NM50N.pdf
(18 pages)
Specifications of STB21NM50N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
1950pF @ 25V
Power - Max
140W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.19 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
18 A
Power Dissipation
140 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5783-2
STB21NM50N
STB21NM50N
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB21NM50N-1
Manufacturer:
STMicroelectronics
Quantity:
1 973
Company:
Part Number:
STB21NM50N-1
Manufacturer:
ST
Quantity:
12 500
Electrical characteristics
2
4/18
Electrical characteristics
(T
Table 4.
1. Characteristic value at turn off on inductive load
Table 5.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
dv/dt
CASE
V
R
oss eq.
(BR)DSS
g
t
t
C
I
I
increases from 0 to 80% V
C
C
GS(th)
d(on)
d(off)
Q
Q
DS(on
DSS
GSS
fs
Q
R
oss
t
oss eq
t
rss
iss
gs
gd
r
f
g
g
(1)
(1)
=25°C unless otherwise specified)
(2)
. is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Drain-source
breakdown voltage
Drain source voltage slope
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
= 0)
DSS
GS
= 0)
I
V
V
V
V
V
V
V
V
V
V
V
V
R
(see
V
V
(see
f=1MHz Gate DC Bias=0
test signal level=20mV
open drain
D
DD
GS
DS
DS
GS
DS
GS
DS
DS
GS
GS
DD
DD
GS
G
= 1mA, V
= 4.7Ω V
=10V
=400V, I
= Max rating
= Max rating,T
= ± 20V
= V
= 10V, I
= 15V
= 25V, f = 1 MHz,
= 0
= 0V, V
= 10V,
=250V, I
= 400V, I
Figure
Figure
Test conditions
Test conditions
GS
,
, I
I
GS
DS
15.)
16.)
D
D
D
GS
D
D
D
=25A,
= 9A
= 9A
= 250µA
= 9A
= 0V to 400V
= 0
= 10V
= 18A,
C
@125°C
Min.
Min.
500
2
Value
0.150 0.190
1950
Typ.
Typ.
420
270
1.6
12
60
22
18
90
30
65
10
30
44
3
oss
Max.
when V
Max.
100
10
1
4
DS
Unit
V/ns
Unit
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
S
Ω
V
V
Ω