STB21NM50N STMicroelectronics, STB21NM50N Datasheet - Page 4

• Manufacturer Part Number: STB21NM50N
• Description: MOSFET N-CH 500V 18A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB21NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 1950pF @ 25V
• Power - Max: 140W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 18 A
• Power Dissipation: 140 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5783-2; STB21NM50N

Electrical characteristics
2
4/18
Electrical characteristics
(T
Table 4.
1. Characteristic value at turn off on inductive load
Table 5.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
dv/dt
CASE
V
R
oss eq.
(BR)DSS
g
t
t
C
I
I
increases from 0 to 80% V
C
C
GS(th)
d(on)
d(off)
Q
Q
DS(on
DSS
GSS
fs
Q
R
oss
t
oss eq
t
rss
iss
gs
gd
r
f
g
g
(1)
(1)
=25°C unless otherwise specified)
(2)
. is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Drain-source
breakdown voltage
Drain source voltage slope
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
= 0)
DSS
GS
= 0)
I
V
V
V
V
V
V
V
V
V
V
V
V
R
(see
V
V
(see
f=1MHz Gate DC Bias=0
test signal level=20mV
open drain
D
DD
GS
DS
DS
GS
DS
GS
DS
DS
GS
GS
DD
DD
GS
G
= 1mA, V
= 4.7Ω V
=10V
=400V, I
= Max rating
= Max rating,T
= ± 20V
= V
= 10V, I
= 15V
= 25V, f = 1 MHz,
= 0
= 0V, V
= 10V,
=250V, I
= 400V, I
Figure
Figure
Test conditions
Test conditions
GS
,
, I
I
GS
DS
15.)
16.)
D
D
D
GS
D
D
D
=25A,
= 9A
= 9A
= 250µA
= 9A
= 0V to 400V
= 0
= 10V
= 18A,
C
@125°C
Min.
Min.
500
2
Value
0.150 0.190
1950
Typ.
Typ.
420
270
1.6
12
60
22
18
90
30
65
10
30
44
3
oss
Max.
when V
Max.
100
10
1
4
DS
Unit
V/ns
Unit
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
S
Ω
V
V
Ω