SSM6J53FE(TE85L,F) Toshiba, SSM6J53FE(TE85L,F) Datasheet
SSM6J53FE(TE85L,F)
Specifications of SSM6J53FE(TE85L,F)
Related parts for SSM6J53FE(TE85L,F)
SSM6J53FE(TE85L,F) Summary of contents
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... TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ○ High-Speed Switching Applications ○ Power Management Switch Applications • 1.5 V drive • Suitable for high-density mounting due to compact package • Low on-resistance : R = 136 mΩ (max) (@ 204 mΩ (max) (@ 364 mΩ (max) (@V on ...
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Switching Time Test Circuit (a) Test Circuit 0 IN − 2.5V 10 μ 4.7 Ω D.U. < < Common Source ...
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I – -3.5 -3 -2.5 V -2.5 -1 -1.5 VGS = -1 -0.5 Common Source Ta = 25° -0.5 -1 Drain - Source voltage – ...
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V – -0.8 Common Source -0 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 − 100 Ambient temperature Ta (°C) C – 5000 ...
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Single Pulse Mounted on FR4 board (25.4 mm × 25.4 mm × 1 Pad: 645 mm 100 10 1 0.001 0.01 Safe operating area - max (Pulsed ms max (Continuous) ...
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... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...