TPCP8002(TE85L,F,M Toshiba, TPCP8002(TE85L,F,M Datasheet - Page 2

• Manufacturer Part Number: TPCP8002(TE85L,F,M
• Description: MOSFET N-CH 20V 9.1A PS8
• Manufacturer: Toshiba

Specifications of TPCP8002(TE85L,F,M

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 4.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 9.1A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 48nC @ 5V
• Input Capacitance (ciss) @ Vds: 3700pF @ 10V
• Power - Max: 840mW
• Mounting Type: Surface Mount
• Package / Case: 2-3V1K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPCP8002(TE85L,F); TPCP8002TE85LFMTR; TPCP8002TE85LFTR; TPCP8002TE85LFTR

Thermal Characteristics
Thermal resistance, channel to ambient (t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient (t = 5 s)
(Note 2b)
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating: pulse width limited by maximum channel temperature.
Note 5: ● on the lower left of the marking indicates Pin 1.
* Weekly code (3 digits):
DD
= 16 V, T
Characteristic
ch
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(the last digit of the calendar year)
= 25°C (initial), L = 0.2 mH, R
(a)
25.4 × 25.4 × 0.8t
R
R
Symbol
th (ch-a)
th (ch-a)
Unit : (mm)
FR-4
G
2
= 25 Ω, I
148.8
Max
74.4
(b) Device mounted on a glass-epoxy board (b)
AR
= 9.1 A
°C/W
°C/W
Unit
(b)
25.4 × 25.4 × 0.8t
TPCP8002
2007-01-16
Unit : (mm)
FR-4