TPCP8002(TE85L,F,M Toshiba, TPCP8002(TE85L,F,M Datasheet - Page 5

• Manufacturer Part Number: TPCP8002(TE85L,F,M
• Description: MOSFET N-CH 20V 9.1A PS8
• Manufacturer: Toshiba

Specifications of TPCP8002(TE85L,F,M

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 4.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 9.1A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 48nC @ 5V
• Input Capacitance (ciss) @ Vds: 3700pF @ 10V
• Power - Max: 840mW
• Mounting Type: Surface Mount
• Package / Case: 2-3V1K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPCP8002(TE85L,F); TPCP8002TE85LFMTR; TPCP8002TE85LFTR; TPCP8002TE85LFTR

10000
1000
100
2.0
1.6
1.2
0.8
0.4
20
16
12
0
8
4
0
−80
0.1
0
Common source
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
(1)
(2)
−40
Drain−source voltage V
Ambient temperature Ta (
Ambient temperature Ta (°C)
50
2.5 V
0
1
R
V GS = 4.5 V
DS (ON)
C – V
P
D
100
40
– Ta
(1) Device mounted on a
(2) Device mounted on a
DS
I D = 2.3,4.5,9.1 A
– Ta
glass-epoxy board (a)
(Note 2a)
glass-epoxy board (b)
(Note 2b)
80
10
I D = 2.3,4.5,9.1 A
DS
150
C rss
C iss
C oss
°
C)
(V)
120
200
100
160
5
100
0.1
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
20
16
12
1
8
4
0
−80
0
0
5
Common source
V DS = −10 V
I D = −200 µA
Pulse test
V DS
−0.2
Drain−source voltage V
−40
Ambient temperature Ta (
3
Total gate charge Q
Dynamic input/output
1
−0.4
20
0
characteristics
I
DR
V
0
th
−0.6
– V
40
– Ta
4 V
DS
V GS
8 V
−0.8
80
40
g
DS
Common source
I D = 9.1 A
Ta = 25°C
Single Pulse test
Common source
Ta = 25°C
Pulse test
V GS = −1 V
(nC)
V DD = 16 V
°
(V)
C)
120
−1
TPCP8002
2007-01-16
−1.2
160
60
10
8
6
4
2
0