2SK2968(F,T) Toshiba, 2SK2968(F,T) Datasheet - Page 5
2SK2968(F,T)
Manufacturer Part Number
2SK2968(F,T)
Description
MOSFET N-CH 900V 10A 2-16C1B
Manufacturer
Toshiba
Datasheet
1.2SK2968FT.pdf
(6 pages)
Specifications of 2SK2968(F,T)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.25 Ohm @ 4A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
2150pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
2-16C1B (TO-247 N)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.25 Ohms
Drain-source Breakdown Voltage
900 V
Continuous Drain Current
10 A
Power Dissipation
150 W
Mounting Style
Through Hole
Gate Charge Qg
70 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2SK2968FT
R
V
G
DD
5
= 25 Ω
= 90 V, L = 14.9 mH
E
AS
=
1
2
⋅
L
⋅
I
2
⋅
⎛
⎜
⎝
B
2009-09-29
2SK2968
VDSS
B
VDSS
−
V
DD
⎞
⎟
⎠