2SK2968(F,T) Toshiba, 2SK2968(F,T) Datasheet - Page 5

• Manufacturer Part Number: 2SK2968(F,T)
• Description: MOSFET N-CH 900V 10A 2-16C1B
• Manufacturer: Toshiba

Specifications of 2SK2968(F,T)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.25 Ohm @ 4A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 2150pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: 2-16C1B (TO-247 N)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.25 Ohms
• Drain-source Breakdown Voltage: 900 V
• Continuous Drain Current: 10 A
• Power Dissipation: 150 W
• Mounting Style: Through Hole
• Gate Charge Qg: 70 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2SK2968FT

R
V
G
DD
5
= 25 Ω
= 90 V, L = 14.9 mH
E
AS
=
1
2
⋅
L
⋅
I
2
⋅
⎛
⎜
⎝
B
2009-09-29
2SK2968
VDSS
B
VDSS
−
V
DD
⎞
⎟
⎠