PMF370XN,115 NXP Semiconductors, PMF370XN,115 Datasheet - Page 3

• Manufacturer Part Number: PMF370XN,115
• Description: MOSFET N-CH 30V 870MA SOT-323
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMF370XN,115

• Package / Case: SC-70-3, SOT-323-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 440 mOhm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 870mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.65nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 37pF @ 25V
• Power - Max: 560mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.44 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 0.87 A
• Power Dissipation: 560 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057727115; PMF370XN T/R; PMF370XN T/R

NXP Semiconductors
PMF370XN_3
Product data sheet
Fig 1. Normalized continuous drain current as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
(A)
I
I
(%)
D
der
10
10
120
10
80
40
-1
-2
1
0
10
T
function of solder point temperature
I
der
0
s p
-1
= 25°C; I
=
I
D ( 25°C )
I
D
50
DM
× 100 %
is single pulse;V
Limit R
100
DSon
= V
GS
150
DS
= 4.5V
T
/ I
sp
D
1
03aa25
(°C)
200
Rev. 03 — 20 June 2008
Fig 2. Normalized total power dissipation as a
DC
P
(%)
N-channel TrenchMOS extremely low level FET
der
120
80
40
0
P
function of solder point temperature
0
der
=
10
P
tot ( 25°C )
P
50
tot
× 100 %
100
V
DS
t
100 μ s
1 ms
10 ms
100 ms
p
(V)
= 10 μ s
PMF370XN
150
© NXP B.V. 2008. All rights reserved.
T
sp
03an15
03aa17
(°C)
10
200
2
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