PMF370XN,115 NXP Semiconductors, PMF370XN,115 Datasheet - Page 6

MOSFET N-CH 30V 870MA SOT-323

PMF370XN,115

Manufacturer Part Number
PMF370XN,115
Description
MOSFET N-CH 30V 870MA SOT-323
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheets

Specifications of PMF370XN,115

Package / Case
SC-70-3, SOT-323-3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
440 mOhm @ 200mA, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
870mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
0.65nC @ 4.5V
Input Capacitance (ciss) @ Vds
37pF @ 25V
Power - Max
560mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.44 Ohm @ 4.5 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
0.87 A
Power Dissipation
560 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057727115
PMF370XN T/R
PMF370XN T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMF370XN,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
PMF370XN,115
Quantity:
3 000
Company:
Part Number:
PMF370XN,115
Quantity:
8 824
NXP Semiconductors
PMF370XN_3
Product data sheet
Fig 7. Gate-source threshold voltage as a function of
Fig 9. Drain-source on-state resistance as a function
V
R
GS (th)
(V)
DSon
(Ω)
1.5
0.5
0.8
0.6
0.4
0.2
2
1
0
1
0
T
−60
junction temperature
of drain current; typical values
I
D
0
j
= 25°C
= 0.25 A;V
V
GS
0.5
0
(V) = 2.5
DS
= V
GS
1
60
max
typ
min
1.5
120
3
2
T
j
I
(°C)
D
03ao01
03al82
(A)
3.5
4.5
180
2.5
Rev. 03 — 20 June 2008
Fig 8. Subthreshold drain current as a function of
Fig 10. Normalized drain-source on-state resistance
(A)
I
N-channel TrenchMOS extremely low level FET
10
10
10
10
a
D
1.8
1.2
0.6
−3
−4
−5
−6
0
T
gate-source voltage
−60
a =
factor as a function of junction temperature
0
j
= 25°C;V
R
DSon ( 25°C )
R
DSon
0.4
min
DS
0
= 5V
0.8
60
typ
PMF370XN
120
1.2
© NXP B.V. 2008. All rights reserved.
V
T
GS
j
max
(°C)
03an65
03al00
(V)
180
1.6
6 of 12

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