BSP250,135 NXP Semiconductors, BSP250,135 Datasheet - Page 3

• Manufacturer Part Number: BSP250,135
• Description: MOSFET P-CH 30V 3A SOT223
• Manufacturer: NXP Semiconductors

Specifications of BSP250,135

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 20V
• Power - Max: 1.65W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.25 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 1650 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934033450135; BSP250 /T3; BSP250 /T3

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Pulse width and duty cycle limited by maximum junction temperature.
2. Device mounted on an epoxy printed-circuit board, 40
1997 Jun 20
handbook, halfpage
V
V
I
I
P
T
T
Source-drain diode
I
I
SYMBOL
D
DM
S
SM
stg
j
DS
GSO
tot
P-channel enhancement mode
vertical D-MOS transistor
P tot
(W)
2.0
1.6
1.2
0.8
0.4
0
0
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
source current (DC)
peak pulsed source current
Fig.2 Power derating curve.
50
100
PARAMETER
150
T amb ( C)
MLB885
200
3
40
open drain
T
note 1
T
T
T
note 1
s
s
amb
s
handbook, halfpage
= 100 C
Soldering point temperature T
(1) R
100 C
100 C
1.5 mm; mounting pad for drain lead minimum 6 cm
= 25 C; note 2
= 0.01.
CONDITIONS
(A)
10
10
I D
10
10
DSon
10
1
2
1
2
1
limitation.
P
t p
T
Fig.3 SOAR.
1
=
s
(1)
t p
T
t
= 100 C.
65
MIN.
DC
10
Product specification
5
1.65
+150
150
V DS (V)
3
1.5
30
20
12
6
MAX.
10 s
BSP250
1 ms
t p =
MLB835
10
V
V
A
A
W
W
A
A
2
C
C
UNIT
2
.