STP10NM60N STMicroelectronics, STP10NM60N Datasheet - Page 11

• Manufacturer Part Number: STP10NM60N
• Description: MOSFET N-CH 600V 8A TO220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP10NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 540pF @ 50V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.53ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Configuration: Single
• Resistance Drain-source Rds (on): 550 mOhms
• Drain-source Breakdown Voltage: 600 V
• Continuous Drain Current: 10 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 19 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-9098-5

STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Table 9.
Figure 22. TO-220FP drawing
Dim.
Dia
G1
F1
F2
L2
L3
L4
L5
L6
L7
G
A
B
D
E
F
H
TO-220FP mechanical data
A
B
H
Min.
0.45
0.75
1.15
1.15
4.95
28.6
15.9
4.4
2.5
2.5
2.4
9.8
2.9
10
9
3
Dia
Doc ID 15764 Rev 5
L6
L2
L7
L3
Typ.
mm
L5
16
F1
D
L4
F2
Package mechanical data
F
E
G1
Max.
2.75
1.70
1.70
10.4
30.6
10.6
16.4
4.6
2.7
0.7
5.2
2.7
3.6
9.3
3.2
1
7012510_Rev_K
G
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