STP10NM60N STMicroelectronics, STP10NM60N Datasheet - Page 4

• Manufacturer Part Number: STP10NM60N
• Description: MOSFET N-CH 600V 8A TO220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP10NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 540pF @ 50V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.53ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Configuration: Single
• Resistance Drain-source Rds (on): 550 mOhms
• Drain-source Breakdown Voltage: 600 V
• Continuous Drain Current: 10 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 19 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-9098-5

Electrical characteristics
2
4/17
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 5.
Table 6.
1. C
C
V
Symbol
Symbol
R
V
oss eq
(BR)DSS
when V
C
I
I
C
DS(on)
C
GS(th)
Q
Q
DSS
GSS
Q
R
oss eq.
oss
rss
iss
gs
gd
g
g
(1)
DS
time related is defined as a constant equivalent capacitance giving the same charging time as C
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent
capacitance time
related
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
increases from 0 to 80% V
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Doc ID 15764 Rev 5
DSS
V
V
V
f=1 MHz open drain
V
V
(see Figure 17)
I
V
V
V
V
D
DS
GS
DS
DD
GS
GS
GS
DS
DS
DS
= 1 mA, V
= max rating
= max rating, T
= 50 V, f = 1 MHz,
= 0
= 0 to 480 V, V
= 10 V
= ± 25 V; V
= V
= 10 V, I
= 480 V, I
Test conditions
Test conditions
GS
, I
GS
D
D
D
= 250 µA
= 4 A
= 0
DS
= 8 A,
=0
GS
C
=125 °C
= 0
Min.
Min.
600
2
-
-
-
-
Typ.
Typ.
0.53
540
110
1.2
44
19
10
6
3
3
Max.
Max.
0.55
100
100
1
4
-
-
-
-
oss
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
pF
V
V
Ω
Ω