STP10NM60N STMicroelectronics, STP10NM60N Datasheet - Page 6

• Manufacturer Part Number: STP10NM60N
• Description: MOSFET N-CH 600V 8A TO220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP10NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 540pF @ 50V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.53ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Configuration: Single
• Resistance Drain-source Rds (on): 550 mOhms
• Drain-source Breakdown Voltage: 600 V
• Continuous Drain Current: 10 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 19 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-9098-5

Electrical characteristics
2.1
6/17
Figure 2.
Figure 4.
Figure 6.
0.01
0.01
0.01
0.1
0.1
0.1
(A)
(A)
(A)
10
10
10
I
I
I
D
D
D
1
1
1
0.1
0.1
0.1
Electrical characteristics (curves)
Safe operating area for TO-220
Safe operating area for TO-220FP
Safe operating area for DPAK, IPAK Figure 7.
1
1
1
Tj=150°C
Tc=25°C
Single
pulse
10
10
10
Tc=25°C
Tc=25°C
Tj=150°C
Tj=150°C
Sinlge
pulse
Sinlge
pulse
100
100
100
V
V
V
DS
DS
DS
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
(V)
(V)
(V)
Doc ID 15764 Rev 5
100µs
100µs
100µs
1µs
10µs
1ms
10ms
10µs
1ms
10ms
1µs
10µs
1ms
10ms
AM03944v1
AM03945v1
AM03944v1
Figure 3.
Figure 5.
Thermal impedance for TO-220
Thermal impedance for TO-220FP
Thermal impedance for DPAK, IPAK