STP10NM60N STMicroelectronics, STP10NM60N Datasheet - Page 12

• Manufacturer Part Number: STP10NM60N
• Description: MOSFET N-CH 600V 8A TO220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP10NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 540pF @ 50V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.53ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Configuration: Single
• Resistance Drain-source Rds (on): 550 mOhms
• Drain-source Breakdown Voltage: 600 V
• Continuous Drain Current: 10 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 19 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-9098-5

Package mechanical data
12/17
DIM.
A
A
D
E
V2
b
c
e
L
L
L
A
D
E
H
R
b
c
e
L
4
2
1
1
2
4
1
2
1
1
m
2
0
0
0
5
0
0
6
6
4
9
0
0
2 .
9 .
0 .
6 .
2 .
4 .
4 .
0 .
4 .
4 .
3 .
6 .
1
i
. n
o
0
0
3
4
0
5
8
0
0
0
5
0
TO-252 (DPAK) mechanical data
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Doc ID 15764 Rev 5
mm.
5
4
2
2
0
0
y t
1 .
7 .
2 .
8 .
8 .
2 .
p
0
0
8
0
0
0
0068772_G
1
m
2
1
0
0
5
0
0
6
6
4
0
8
1 .
2 .
4 .
6 .
6 .
2 .
6 .
4 .
9 .
6 .
a
1
1 .
o
. x
0
0
3
0
0
0
0
0
0
0
0