IXTP6N100D2 IXYS, IXTP6N100D2 Datasheet - Page 2

• Manufacturer Part Number: IXTP6N100D2
• Description: MOSFET N-CH 1000V 6A TO220AB
• Manufacturer: IXYS

Specifications of IXTP6N100D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 3A, 0V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 6A
• Gate Charge (qg) @ Vgs: 95nC @ 5V
• Input Capacitance (ciss) @ Vds: 2650pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Vds, Max, (v): 1000
• Id(on), Min, (a): 6
• Rds(on), Max, (?): 2.2
• Vgs(off), Max, (v): -4.5
• Ciss, Typ, (pf): 2650
• Crss, Typ, (pf): 41
• Qg, Typ, (nc): 95
• Pd, (w): 300
• Rthjc, Max, (ºc/w): -
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Safe-Operating-Area Specification
Symbol
SOA
Source-Drain Diode
Symbol
(T
V
t
I
Q
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
TO-263 (IXTA) Outline
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
I
I
V
Test Conditions
TO-247
Test Conditions
TO-220
F
F
DS
GS
GS
GS
DS
R
G
= 6A, V
= 3A, -di/dt = 100A/μs
= 100V, V
PRELIMINARY TECHNICAL INFORMATION
= 30V, I
= -10V, V
= ±5V, V
= 2.4Ω (External)
= 5V, V
= 800V, I
GS
DS
1. Gate
2. Drain
3. Source
4. Drain
D
DS
= -10V, Note 1
GS
= 3A, Note 1
DS
D
= 500V, I
= 500V, I
= 225mA, T
= -10V
4,835,592
4,881,106
= 25V, f = 1MHz
D
D
4,931,844
5,017,508
5,034,796
= 3A
= 3A
C
= 75°C, Tp = 5s
Dim.
A
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
5,049,961
5,063,307
5,187,117
14.61
4.06
0.51
1.14
0.40
1.14
8.64
8.00
9.65
6.22
2.54
2.29
1.02
1.27
Min.
Millimeter
10.41
15.88
Max.
5,237,481
5,381,025
5,486,715
4.83
0.99
1.40
0.74
1.40
9.65
8.89
8.13
BSC
2.79
1.40
1.78
Characteristic Values
2.6
Min.
Characteristic Values
Characteristic Values
Min.
Min.
180
.160
.020
.045
.016
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
Min.
Inches
6,162,665
6,259,123 B1
6,306,728 B1
2650
0.50
0.21
Typ.
Max.
BSC
.190
.039
.055
.029
.055
.380
.320
.405
.320
.625
.110
.055
.070
167
4.2
Typ.
Typ.
41
25
80
34
47
95
11
51
952
0.8
7.6
16
Max.
0.41 °C/W
6,404,065 B1
6,534,343
6,583,505
Max.
Max.
1.3
°C/W
°C/W
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
ns
W
S
V
A
IXTA6N100D2 IXTP6N100D2
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-247 (IXTH) AD Outline
TO-220 (IXTP) Outline
1 = Gate
2 = Drain
3 = Source
Pins: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
3 - Source
7,005,734 B2
7,063,975 B2
IXTH6N100D2
2 - Drain
4 - Drain
7,157,338B2