IXTP6N100D2 IXYS, IXTP6N100D2 Datasheet - Page 5

• Manufacturer Part Number: IXTP6N100D2
• Description: MOSFET N-CH 1000V 6A TO220AB
• Manufacturer: IXYS

Specifications of IXTP6N100D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 3A, 0V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 6A
• Gate Charge (qg) @ Vgs: 95nC @ 5V
• Input Capacitance (ciss) @ Vds: 2650pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Vds, Max, (v): 1000
• Id(on), Min, (a): 6
• Rds(on), Max, (?): 2.2
• Vgs(off), Max, (v): -4.5
• Ciss, Typ, (pf): 2650
• Crss, Typ, (pf): 41
• Qg, Typ, (nc): 95
• Pd, (w): 300
• Rthjc, Max, (ºc/w): -
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

© 2009 IXYS CORPORATION, All Rights Reserved
10,000
100.00
1,000
10.00
1.00
0.10
0.01
100
1.00
0.10
10
0.0001
0
10
f
T
T
Single Pulse
= 1 MHz
J
C
R
= 150ºC
= 25ºC
DS(on)
Fig. 15. Forward-Bias Safe Operating Area
5
Limit
10
Fig. 13. Capacitance
15
@ T
V
DS
0.001
V
C
DS
100
- Volts
= 25ºC
20
- Volts
25
C oss
C rss
C iss
Fig. 17. Maximum Transient Thermal Impedance
30
0.01
35
DC
1,000
100µs
1ms
10ms
100ms
Pulse Width - Seconds
40
100.00
10.00
1.00
0.10
-1
-2
-3
-4
-5
5
4
3
2
1
0
0
10
T
T
Single Pulse
V
I
I
D
G
J
C
DS
R
10
= 150ºC
= 3A
= 10mA
DS(on)
Fig. 16. Forward-Bias Safe Operating Area
= 75ºC
0.1
= 500V
Limit
20
IXTA6N100D2 IXTP6N100D2
30
Fig. 14. Gate Charge
@ T
Q
40
G
V
DS
- NanoCoulombs
C
100
= 75ºC
- Volts
50
1
60
IXTH6N100D2
70
80
IXYS REF: T_6N100D2(6C)8-27-09
DC
90
1,000
25µs
100µs
1ms
10ms
100ms
100
10