IXTP6N100D2 IXYS, IXTP6N100D2 Datasheet - Page 4

• Manufacturer Part Number: IXTP6N100D2
• Description: MOSFET N-CH 1000V 6A TO220AB
• Manufacturer: IXYS

Specifications of IXTP6N100D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 3A, 0V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 6A
• Gate Charge (qg) @ Vgs: 95nC @ 5V
• Input Capacitance (ciss) @ Vds: 2650pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Vds, Max, (v): 1000
• Id(on), Min, (a): 6
• Rds(on), Max, (?): 2.2
• Vgs(off), Max, (v): -4.5
• Ciss, Typ, (pf): 2650
• Crss, Typ, (pf): 41
• Qg, Typ, (nc): 95
• Pd, (w): 300
• Rthjc, Max, (ºc/w): -
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1.3
1.2
1.1
1.0
0.9
0.8
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
16
14
12
10
8
6
4
2
0
-4.0
-50
-50
V
V
I
Fig. 7. Normalized R
D
DS
GS
-3.5
= 3A
= 30V
= 0V
-25
-25
Fig. 11. Breakdown and Threshold Voltages
-3.0
0
0
-2.5
vs. Junction Temperature
Fig. 9. Input Admittance
T
T
J
J
- Degrees Centigrade
- Degrees Centigrade
25
25
-2.0
V
DS(on)
GS
T
J
- Volts
= 125ºC
-1.5
- 40ºC
50
50
25ºC
vs. Junction Temperature
V
-1.0
GS(off)
75
75
@ V
-0.5
BV
DS
100
100
DSX
= 25V
@ V
0.0
GS
125
125
= - 5V
0.5
150
1.0
150
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
12
10
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
0.3
0
0
V
V
DS
GS
Fig. 12. Forward Voltage Drop of Intrinsic Diode
= 30V
= -10V
2
0.4
2
Fig. 8. R
T
T
J
J
IXTA6N100D2 IXTP6N100D2
= 125ºC
= 25ºC
4
0.5
Fig. 10. Transconductance
4
DS(on)
vs. Drain Current
T
6
I
I
J
Normalized to I
D
D
V
= 125ºC
- Amperes
0.6
- Amperes
SD
6
- Volts
8
T
J
= - 40ºC
0.7
8
10
25ºC
125ºC
IXTH6N100D2
D
= 3A Value
0.8
10
T
12
V
J
GS
= 25ºC
= 0V
5V
0.9
12
14
- - - -
1.0
16
14