IXTP6N100D2 IXYS, IXTP6N100D2 Datasheet - Page 3

• Manufacturer Part Number: IXTP6N100D2
• Description: MOSFET N-CH 1000V 6A TO220AB
• Manufacturer: IXYS

Specifications of IXTP6N100D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 3A, 0V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 6A
• Gate Charge (qg) @ Vgs: 95nC @ 5V
• Input Capacitance (ciss) @ Vds: 2650pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Vds, Max, (v): 1000
• Id(on), Min, (a): 6
• Rds(on), Max, (?): 2.2
• Vgs(off), Max, (v): -4.5
• Ciss, Typ, (pf): 2650
• Crss, Typ, (pf): 41
• Qg, Typ, (nc): 95
• Pd, (w): 300
• Rthjc, Max, (ºc/w): -
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

© 2009 IXYS CORPORATION, All Rights Reserved
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
6
5
4
3
2
1
0
6
5
4
3
2
1
0
0
0
0
1
100
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
200
2
5
Fig. 5. Drain Current @ T
300
3
400
4
10
V
V
500
DS
DS
V
5
- Volts
- Volts
DS
600
- Volts
V
6
GS
700
= 5V
15
V
2V
1V
GS
7
800
-1V
- 2V
- 3V
J
= 5V
0V
-1V
- 2V
- 3V
0V
= 100ºC
J
8
900 1000 1100 1200
J
= 125ºC
= 25ºC
V
20
GS
9
= - 3.25V
- 3.50V
- 3.75V
- 4.00V
- 4.25V
- 4.50V
10
11
25
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
14
12
10
8
6
4
2
0
-4.6
0
0
Fig. 2. Extended Output Characteristics @ T
100
-4.4
Fig. 6. Dynamic Resistance vs. Gate Voltage
200
10
IXTA6N100D2 IXTP6N100D2
-4.2
Fig. 4. Drain Current @ T
V
300
GS
= 5V
2V
1V
400
-4.0
20
-1V
- 2V
- 3V
0V
V
500
DS
-3.8
V
V
DS
GS
- Volts
T
600
J
30
- Volts
- Volts
= 100ºC
-3.6
700
IXTH6N100D2
-3.4
J
800
40
= 25ºC
∆
T
V
J
DS
900
= 25ºC
-3.2
= 700V - 100V
1000 1100 1200
J
50
V
= 25ºC
- 4.50V
- 3.00V
- 3.25V
- 3.50V
- 3.75V
- 4.00V
- 4.25V
GS
-3.0
=
-2.8
60