TPCA8051-H(TE12L,Q Toshiba, TPCA8051-H(TE12L,Q Datasheet - Page 26

• Manufacturer Part Number: TPCA8051-H(TE12L,Q
• Description: MOSFET N-CH 80V 28A 8-SOP ADV
• Manufacturer: Toshiba

Specifications of TPCA8051-H(TE12L,Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 2.3V @ 1mA
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Gate Charge (qg) @ Vgs: -
• Rds On (max) @ Id, Vgs: -
• Other names: TPCA8051-HTE12LQTR

26
The latest addition to the π-MOS portfolio, the π-MOSVII Series offers reduced capacitances due to optimized chip design and
is available with a greatly wider range of electrical characteristics.
●
●
●
●
TK10X40D
TK11A45D
TK13A45D
TK16A45D
TK4A50D
TK5A50D
TK5P50D
TK6A50D
TK7A50D
TK7P50D
TK8A50D
TK10A50D
TK12A50D
TK13A50D
TK15J50D
TK15A50D
TK18A50D
TK20J50D
TK4A53D
TK5A53D
TK5P53D
TK6A53D
TK6P53D
TK12A53D
TK12X53D
TK4A55DA
TK4A55D
TK4P55D
Next-Generation π-MOSVII Series (V
V
120 W (20 V/6 A) Flyback Converter
V
Part Number
Features
●
●
●
Performance Comparisons Between π-MOSVII and π-MOSVI Devices (600 V/10 A)
Efficiency Test Circuit
Product Lineup
IN
IN
15% reduction in Qg from
Available in 50-V steps of V
Rated avalanche and reverse recovery current capabilities
= 100 VAC, V
*:
Test conditions:
Drain-source breakdown voltage
Drain-source ON-resistance
V
Absolute Maximum
GS
DSS
Gate threshold voltage
400
450
500
525
550
Diode forward voltage
Gate leakage current
= +10, −0 V
Drain cut-off current
Total gate charge
(V)
Ratings
Power MOSFETs
Characteristic
I
TK10A60D : V
D
3.5
10
11
13
16
10
12
13
15
15
18
20
12
12
4
5
5
6
7
7
8
4
5
5
6
6
4
4
(A)
+
–
π
PFC
DSS
-MOS
R
V
DS(ON)
GS
0.55
0.62
0.46
0.27
1.22
0.85
0.72
0.52
0.27
0.27
0.58
0.58
2.45
1.88
1.5
1.5
1.4
1.2
0.4
0.4
0.3
1.7
1.5
1.5
1.3
1.3
1.9
and in finer steps of RDS(ON).
= 10 V
GS
2
= ± 30 V, 2SK3569 : V
VI
(Ω)
due to optimized chip design
Existing Equivalent
2SK3863/2SK4103
V
Symbol
R
± I
(BR)DSS
Part Number
DSS
V
I
DS(ON)
2SK3499
2SK3869
2SK3743
2SK3935
2SK3563
2SK3561
2SK3568
2SK4012
2SK4107
2SK3934
2SK4108
2SK3563
2SK3398
+
–
DSS
V
Q
DSF
GSS
th
g
—
—
—
—
—
—
—
—
—
—
—
—
—
—
= 400 V to 650 V)
MAIN
V
GS
DD
Synchronous
Rectifier
= ± 25 V
V
TFP
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
DPAK
TO-220SIS
TO-220SIS
DPAK
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-3P(N)
TO-220SIS
TO-220SIS
TO-3P(N)
TO-220SIS
TO-220SIS
DPAK
TO-220SIS
DPAK
TO-220SIS
TFP
TO-220SIS
TO-220SIS
DPAK
= 400 V, V
V
I
GS
Package
D
V
DS
I
V
DR
DS
= +10 mA, V
condition*, V
TK10A60D
GS
Test Conditions
2SK3569
= 600 V, V
=10 A, V
Part Number
= 10 V, I
= 10 V, I
Package
Ratings
vs
Series
GS
+
–
= 10 V, I
D
GS
D
GS
V
GS
= 1 mA
DS
= 5 A
OUT
TK5A55D
TK8A55DA
TK9A55DA
TK11A55D
TK12A55D
TK12J55D
TK14A55D
TK16A55D
TK16J55D
TK2P60D
TK2Q60D
TK3A60DA
TK4A60DA
TK4P60DA
TK4A60D
TK6A60D
TK8A60DA
TK10A60D
TK12A60D
TK13A60D
TK15A60D
TK2A65D
TK3A65DA
TK5A65D
TK8A65D
TK12A65D
TK13A65D
= 0 V
= 0 V
= 0 V
Part Number
= 0 V
D
= 10 A
*
*
76%
90%
88%
86%
84%
82%
80%
78%
600
Min
2.0
V
—
—
—
—
—
Absolute Maximum
DSS
550
600
650
0
TK10A60D
600 V/10 A
TO-220SIS
π-MOSVII
(V)
Ratings
Typ.
25
—
—
—
—
—
—
20
I
D
7.5
8.5
2.5
3.5
3.5
7.5
2.5
11
12
12
14
16
16
10
12
13
15
12
13
5
2
2
4
6
2
5
8
Max
0.75
–1.7
(A)
± 1
4.0
10
—
—
Efficiency greater than a π-MOSVI MOSFET
40
R
V
Min
600
2.0
—
—
—
—
—
GS
DS(ON)
1.07
0.86
0.63
0.57
0.57
0.37
0.33
0.37
1.25
0.75
0.55
0.43
0.37
3.26
2.51
1.43
0.84
0.54
0.47
1.7
4.3
2.8
2.2
2.2
1.7
= 10 V
TO-220SIS
600 V/10 A
5
1
π-MOSVI
2SK3569
60
Pout (W)
(Ω)
Typ.
42
—
—
—
—
—
Part Number
80
Equivalent
2SK2865
2SK4002
2SK3567
2SK3975
2SK3562
2SK3667
2SK3569
2SK3797
± 10
0.75
–1.7
Existing
Max
100
4.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
100
Unit
*
μA
μA
nC
V
V
Ω
V
: Under development
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-3P(N)
TO-220SIS
TO-220SIS
TO-3P(N)
New PW-Mold
New PW-Mold 2
TO-220SIS
TO-220SIS
DPAK
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
2SK3569
TK10A60D
120
Package
Rg = 4.7 Ω
Rg = 4.7 Ω
Rg = 47 Ω
Rg = 47 Ω
140