FQB22P10TM_F085 Fairchild Semiconductor, FQB22P10TM_F085 Datasheet

MOSFET P-CH 100V 22A D2PAK

FQB22P10TM_F085

Manufacturer Part Number
FQB22P10TM_F085
Description
MOSFET P-CH 100V 22A D2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQB22P10TM_F085

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
125 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
1500pF @ 25V
Power - Max
3.75W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.125 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
22 A
Power Dissipation
3750 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FQB22P10TM_F085TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQB22P10TM_F085
Manufacturer:
Fairchild Semiconductor
Quantity:
135
©2009 Fairchild Semiconductor Corporation
FQB22P10TM_F085 Rev. A
FQB22P10TM_F085
100V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
G
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
S
A
C
Parameter
Parameter
= 25°C) *
= 25°C)
D
FQB Series
2
-PAK
D
T
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• -22A, -100V, R
• Low gate charge ( typical 40 nC )
• Low Crss ( typical 160 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175 C maximum junction tem p erature rating
• Qualified to AEC Q101
• RoHS Compliant
1
Typ
FQB22P10TM_F085
DS(on)
--
--
--
-55 to +175
G
= 0.125 @V
-15.6
-100
12.5
3.75
0.83
710
-6.0
125
300
-22
-88
-22
30
D
Max
62.5
S
1.2
40
February 2009
GS
QFET
= -10 V
www.fairchildsemi.com
W/°C
Units
°C/W
°C/W
°C/W
V/ns
Units
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
®

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FQB22P10TM_F085 Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient * JA R Thermal Resistance, Junction-to-Ambient JA * When mounted on the minimum pad size recommended (PCB Mount) ©2009 Fairchild Semiconductor Corporation FQB22P10TM_F085 Rev. A Features • -22A, -100V, R • Low gate charge ( typical • Low Crss ( typical 160 pF) • Fast switching • 100% avalanche tested • ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 2.2mH -22A -25V ≤ -22A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature FQB22P10TM_F085 Rev 25°C unless otherwise noted C Test Conditions -250 -250 A, Referenced to 25° -100 ...

Page 3

... D Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3500 3000 C iss 2500 C oss 2000 1500 C rss 1000 500 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics FQB22P10TM_F085 Rev 25℃ ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics 10V ※ Note : T = 25℃ ...

Page 4

... Notes : 175 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area FQB22P10TM_F085 Rev. A (Continued) 2.5 2.0 1.5 1.0 ※ Notes : 0 -250 μ 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 25 20 100 Figure 10. Maximum Drain Current ※ ...

Page 5

... GS GS -3mA -3mA Resistive Switching Test Circuit & Waveforms -10V -10V Unclamped Inductive Switching Test Circuit & Waveforms -10V -10V FQB22P10TM_F085 Rev. A Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT -10V -10V DUT DUT 10% 10% DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FQB22P10TM_F085 Rev DUT DUT Driver Driver Compliment of DUT Compliment of DUT (N-Channel) (N-Channel) • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

Page 7

... Package Dimensions 9.90 0.20 1.27 0.10 2.54 TYP 10.00 FQB22P10TM_F085 Rev -PAK 0.80 0.10 2.54 TYP 0.20 7 4.50 0.20 +0.10 1.30 –0.05 0.10 0.15 2.40 0.20 +0.10 0.50 –0.05 10.00 0.20 (8.00) (4.40) (2XR0.45) 0.80 0.10 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FQB22P10TM_F085 Rev. A ® Programmable Active Droop™ SM ® QFET QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/ time™ ...

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