FDA20N50_F109 Fairchild Semiconductor, FDA20N50_F109 Datasheet - Page 3

• Manufacturer Part Number: FDA20N50_F109
• Description: MOSFET N-CH 500V 22A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDA20N50_F109

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 230 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 59.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 3120pF @ 25V
• Power - Max: 280W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.23 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 22 A
• Power Dissipation: 280000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDA20N50 / FDA20N50_F109 Rev. B1
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
6000
5000
4000
3000
2000
1000
10
10
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
1
0
10
0
0.8
0.6
0.4
0.2
0.0
10
-1
Top :
Bottom :
Drain Current and Gate Voltage
-1
0
15.0 V
10.0 V
5.5 V
8.0 V
7.0 V
6.5 V
6.0 V
V
C
C
C
GS
15
rss
oss
iss
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
30
10
10
I
D
0
0
, Drain Current [A]
45
V
GS
= 10V
C
C
C
iss
oss
rss
60
= C
= C
= C
gs
gd
ds
10
10
+ C
+ C
* Notes :
* Note : T
1
1
V
1. 250
2. T
gd
GS
gd
* Note :
(C
C
= 20V
1. V
2. f = 1 MHz
= 25
75
ds
µ
J
s Pulse Test
= shorted)
= 25
GS
o
C
= 0 V
o
C
90
3
10
10
10
10
10
12
10
8
6
4
2
0
2
1
0
1
0
Figure 2. Transfer Characteristics
0.2
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
0
2
Variation vs. Source Current
0.4
10
4
150
25
150
0.6
V
o
V
o
and Temperatue
C
C
Q
SD
GS
o
C
G
, Source-Drain voltage [V]
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
20
6
25
0.8
o
V
V
V
C
DS
DS
DS
= 100V
= 250V
= 400V
1.0
-55
30
o
8
C
1.2
*Notes :
1. V
2. 250
* Notes :
1. V
2. 250
* Note : I
GS
DS
= 0V
µ
10
s Pulse Test
40
µ
= 40V
s Pulse Test
1.4
D
www.fairchildsemi.com
= 20A
1.6
12
50