BUK9222-55A,118 NXP Semiconductors, BUK9222-55A,118 Datasheet

MOSFET N-CH 55V 48A SOT428

BUK9222-55A,118

Manufacturer Part Number
BUK9222-55A,118
Description
MOSFET N-CH 55V 48A SOT428
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9222-55A,118

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
48A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
2210pF @ 25V
Power - Max
103W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.02 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
48 A
Power Dissipation
103 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
 Details
Other names
934056697118
BUK9222-55A /T3
BUK9222-55A /T3

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK9222-55A,118
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
P
I
D
DS
tot
BUK9222-55A
N-channel TrenchMOS logic level FET
Rev. 02 — 1 February 2011
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
12 V and 24 V loads
Automotive and general purpose
power switching
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
Conditions
T
V
see
T
j
mb
GS
≥ 25 °C; T
Figure
= 25 °C; see
= 5 V; T
1; see
mb
j
≤ 175 °C
= 25 °C;
Figure 2
Figure 3
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Motors, lamps and solenoids
Min
-
-
-
Product data sheet
Typ
-
-
-
Max Unit
55
48
103
V
A
W

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BUK9222-55A,118 Summary of contents

Page 1

... BUK9222-55A N-channel TrenchMOS logic level FET Rev. 02 — 1 February 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... R GS avalanche energy °C; nk;unclamped j(init) Simplified outline SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9222-55A N-channel TrenchMOS logic level FET Min = Figure 12; ≤ sup = 5 V ...

Page 3

... P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9222-55A N-channel TrenchMOS logic level FET Min - - -15 Figure 1; - Figure 1 - ≤ 10 µs; [ -55 - ° Ω ...

Page 4

... Product data sheet DSon δ D. Conditions see Figure 4 −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9222-55A N-channel TrenchMOS logic level FET 03ne72 = 10 μ 100 μ 100 (V) DS Min Typ - - - 71.4 03ne73 t p δ ...

Page 5

... ° °C; see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9222-55A N-channel TrenchMOS logic level FET Min Typ Max 1 2 500 - 2 100 ...

Page 6

... V (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9222-55A N-channel TrenchMOS logic level FET 30 DSon Drain-source on-state resistance as a function of drain current; typical values ( Forward transconductance as a function of drain current ...

Page 7

... Fig 10. Gate-source voltage as a function of gate 03aa33 50 R DSon (mΩ 120 180 ( ° Fig 12. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9222-55A N-channel TrenchMOS logic level FET 14V charge; typical values V ( ...

Page 8

... Fig 14. Input, output and reverse transfer capacitances 120 I S (A) 100 80 = 175 ° 0.0 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9222-55A N-channel TrenchMOS logic level FET C iss C oss C rss 0 −2 − function of drain-source voltage; typical values 03nc86 = 25 °C ...

Page 9

... REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9222-55A N-channel TrenchMOS logic level FET min 10.4 2.95 0.5 2.285 4.57 9 ...

Page 10

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK9222-55A v.2 20110201 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...

Page 11

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9222-55A N-channel TrenchMOS logic level FET © NXP B.V. 2011. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 February 2011 BUK9222-55A N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 1 February 2011 Document identifier: BUK9222-55A ...

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