BUK9222-55A,118 NXP Semiconductors, BUK9222-55A,118 Datasheet - Page 10

• Manufacturer Part Number: BUK9222-55A,118
• Description: MOSFET N-CH 55V 48A SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9222-55A,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 2210pF @ 25V
• Power - Max: 103W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.02 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 48 A
• Power Dissipation: 103 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details
• Other names: 934056697118; BUK9222-55A /T3; BUK9222-55A /T3

NXP Semiconductors
8. Revision history
Table 7.
BUK9222-55A
Product data sheet
Document ID
BUK9222-55A v.2
Modifications:
BUK9222-55A v.1
Revision history
Release date
20110201
20010417
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•
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 February 2011
Data sheet status
Product data sheet
Product specification
Change notice
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-
N-channel TrenchMOS logic level FET
BUK9222-55A
Supersedes
BUK9222-55A v.1
-
© NXP B.V. 2011. All rights reserved.
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