BUK9222-55A,118 NXP Semiconductors, BUK9222-55A,118 Datasheet - Page 4

MOSFET N-CH 55V 48A SOT428

BUK9222-55A,118

Manufacturer Part Number
BUK9222-55A,118
Description
MOSFET N-CH 55V 48A SOT428
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9222-55A,118

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
48A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
2210pF @ 25V
Power - Max
103W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.02 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
48 A
Power Dissipation
103 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
 Details
Other names
934056697118
BUK9222-55A /T3
BUK9222-55A /T3

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK9222-55A,118
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9222-55A
Product data sheet
Symbol
R
R
Fig 3.
Fig 4.
th(j-mb)
th(j-a)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from junction
to mounting base
thermal resistance from junction
to ambient
Z
(K/W)
th(j-mb)
(A)
I
10
10
10
D
10
10
10
10
−1
−2
−3
1
1
3
2
10
1
−6
P
δ = 0.5
0.2
0.1
0.05
0.02
Single Shot
t
p
T
R
DSon
10
δ =
−5
= V
T
t
t
p
All information provided in this document is subject to legal disclaimers.
DS
/ I
D
10
Rev. 02 — 1 February 2011
Conditions
see
−4
Figure 4
10
10
−3
D.C.
10
−2
V
DS
N-channel TrenchMOS logic level FET
(V)
P
t
10
p
−1
T
t
100 μs
1 ms
10 ms
100 ms
p
BUK9222-55A
t
= 10 μs
Min
-
-
δ =
p
(s)
03ne72
03ne73
t
T
t
p
10
1
2
Typ
-
71.4
© NXP B.V. 2011. All rights reserved.
Max
1.5
-
Unit
K/W
K/W
4 of 13

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