BUK9222-55A,118 NXP Semiconductors, BUK9222-55A,118 Datasheet - Page 3

• Manufacturer Part Number: BUK9222-55A,118
• Description: MOSFET N-CH 55V 48A SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9222-55A,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 2210pF @ 25V
• Power - Max: 103W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.02 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 48 A
• Power Dissipation: 103 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details
• Other names: 934056697118; BUK9222-55A /T3; BUK9222-55A /T3

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BUK9222-55A
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
peak drain current is limited by chip, not package.
I
(%)
der
120
80
40
0
function of mounting base temperature
Normalized continuous drain current as a
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
50
100
150
All information provided in this document is subject to legal disclaimers.
T
mb
03aa24
(°C)
Rev. 02 — 1 February 2011
200
Conditions
T
R
T
see
T
T
see
T
T
pulsed; t
I
V
unclamped
D
j
mb
mb
mb
mb
mb
GS
GS
≥ 25 °C; T
= 48 A; V
Figure 3
Figure 3
= 25 °C; V
= 100 °C; V
= 25 °C; pulsed; t
= 25 °C; see
= 25 °C
= 5 V; T
= 20 kΩ
p
≤ 10 µs; T
sup
j(init)
j
Fig 2.
≤ 175 °C
GS
≤ 55 V; R
GS
= 25 °C; nk;
P
Figure 2
(%)
= 5 V; see
der
120
= 5 V; see
80
40
mb
0
p
function of mounting base temperature
Normalized total power dissipation as a
0
= 25 °C
≤ 10 µs;
GS
= 50 Ω;
Figure
N-channel TrenchMOS logic level FET
Figure 1
50
1;
BUK9222-55A
[1]
100
Min
-
-
-15
-
-
-
-
-55
-55
-
-
-
150
© NXP B.V. 2011. All rights reserved.
T
mb
175
175
Max
55
55
15
48
34
193
103
48
193
160
03aa16
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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