PH3330L,115 NXP Semiconductors, PH3330L,115 Datasheet - Page 3

• Manufacturer Part Number: PH3330L,115
• Description: MOSFET N-CH 30V 100A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PH3330L,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 30.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4840pF @ 12V
• Power - Max: 62.5W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0033 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 62500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058817115; PH3330L T/R; PH3330L T/R

NXP Semiconductors
PH3330L_2
Product data sheet
Fig 1.
Fig 3.
(%)
I
(A)
der
I
D
120
10
10
80
40
10
0
3
2
1
10
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
50
100
Limit R
150
DSon
T
= V
mb
1
03aa23
(°C)
DS
/ I
Rev. 02 — 22 October 2008
200
D
DC
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
N-channel TrenchMOS logic level FET
50
100
V
DS
t
100 μ s
1 ms
10 ms
100 ms
p
(V)
=
10 μ s
150
PH3330L
© NXP B.V. 2008. All rights reserved.
T
003aab259
mb
03aa15
(°C)
10
200
2
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