PH3330L,115 NXP Semiconductors, PH3330L,115 Datasheet - Page 5

• Manufacturer Part Number: PH3330L,115
• Description: MOSFET N-CH 30V 100A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PH3330L,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 30.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4840pF @ 12V
• Power - Max: 62.5W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0033 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 62500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058817115; PH3330L T/R; PH3330L T/R

NXP Semiconductors
6. Characteristics
Table 6.
PH3330L_2
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
DSS
GSS
(BR)DSS
GS(th)
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS1
GS2
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
gate resistance
total gate charge
gate-source charge
pre-threshold
gate-source charge
post-threshold
gate-source charge
gate-drain charge
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
Conditions
I
I
I
Figure
I
Figure
I
Figure
V
V
V
V
V
Figure
V
Figure
V
Figure
f = 1 MHz
I
Figure
I
I
Figure
I
Figure 13
V
T
V
T
V
T
D
D
D
D
D
D
D
D
D
j
j
j
DS
DS
GS
GS
GS
GS
GS
DS
DS
DS
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 A; V
= 0 A; V
= 25 A; V
= 25 A; V
= 25 °C; see
= 25 °C
= 25 °C; see
= 30 V; V
= 30 V; V
= 12 V; V
= 0 V; V
= 12 V; V
= 16 V; V
= -16 V; V
= 10 V; I
= 10 V; I
= 4.5 V; I
8; see
8; see
8; see
10; see
11; see
10; see
12; see
12; see
DS
Rev. 02 — 22 October 2008
DS
DS
DS
DS
DS
DS
GS
D
D
D
= 0 V; V
Figure 9
Figure 9
Figure 9
GS
GS
GS
GS
DS
GS
GS
DS
= 25 A; T
= 25 A; T
= 12 V; V
= 12 V; V
= 12 V; see
Figure 10
Figure 11
Figure 11
Figure 13
Figure 13
= V
= V
= V
= 25 A; T
Figure 14
Figure 14
= 0 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
; T
; T
; T
GS
j
j
j
j
j
GS
GS
= 4.5 V
j
j
j
j
= 25 °C; see
= 150 °C; see
= -55 °C; see
= 25 °C; see
= 150 °C; see
j
j
j
= 25 °C
= 150 °C
= 25 °C
= 25 °C; see
= 25 °C
= -55 °C
= 25 °C
Figure
= 4.5 V; see
= 4.5 V; see
12; see
N-channel TrenchMOS logic level FET
Min
30
27
1.3
0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.7
-
-
-
-
-
-
2.3
4.1
3.4
0.7
30.5
28.5
15.4
7.7
7.7
6.9
3.4
4840
5380
960
410
PH3330L
© NXP B.V. 2008. All rights reserved.
Max
-
-
2.15
-
2.6
1
100
100
100
3.3
6
4.5
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
pF
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