PH3330L,115 NXP Semiconductors, PH3330L,115 Datasheet - Page 8

• Manufacturer Part Number: PH3330L,115
• Description: MOSFET N-CH 30V 100A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PH3330L,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 30.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4840pF @ 12V
• Power - Max: 62.5W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0033 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 62500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058817115; PH3330L T/R; PH3330L T/R

NXP Semiconductors
PH3330L_2
Product data sheet
Fig 9.
Fig 11. Normalized drain-source on-state resistance
(A)
I
10
10
10
10
D
a
1.6
1.2
0.8
0.4
−3
−4
−5
−6
2
0
gate-source voltage
-60
factor as a function of junction temperature
Sub-threshold drain current as a function of
0
0.5
0
1
min
60
1.5
typ
120
2
003aab273
003aab271
max
V
T
j
GS
(°C)
(V)
Rev. 02 — 22 October 2008
180
2.5
Fig 10. Drain-source on-state resistance as a function
Fig 12. Gate-source voltage as a function of gate
R
(mΩ)
V
(V)
DSon
GS
10
10
8
6
4
2
0
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
I
T
D
j
V
= 25 A
= 25 °C
GS
N-channel TrenchMOS logic level FET
(V) =
20
20
12 V
3
40
40
3.2
60
V
60
DS
PH3330L
© NXP B.V. 2008. All rights reserved.
80
= 19 V
Q
003aab262
003aab264
G
I
3.4
D
(nC)
(A)
3.6
3.8
4.5
10
100
5
80
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