PH3330L,115 NXP Semiconductors, PH3330L,115 Datasheet - Page 7

• Manufacturer Part Number: PH3330L,115
• Description: MOSFET N-CH 30V 100A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PH3330L,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 30.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4840pF @ 12V
• Power - Max: 62.5W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0033 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 62500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058817115; PH3330L T/R; PH3330L T/R

NXP Semiconductors
PH3330L_2
Product data sheet
Fig 5.
Fig 7.
(pF)
C
(A)
10
10
10
I
100
D
80
60
40
20
4
3
2
0
10
function of drain-source voltage; typical values
function of gate-source voltage; typical values
Output characteristics: drain current as a
Input and reverse transfer capacitances as a
0
-1
C
C
V
rss
iss
GS
(V) = 10
0.2
5
4.5
0.4
1
3.8
3.6
V
0.6
GS
(V)
V
003aab261
003aab267
DS
(V)
2.8
2.6
3.4
3.2
Rev. 02 — 22 October 2008
3
10
0.8
Fig 6.
Fig 8.
V
GS(th)
(V)
(A)
I
D
100
1.5
0.5
80
60
40
20
3
2
1
0
0
-60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
Gate-source threshold voltage as a function of
0
N-channel TrenchMOS logic level FET
0
1
max
typ
min
T
j
= 150 °C
60
2
25 °C
120
3
PH3330L
© NXP B.V. 2008. All rights reserved.
003aab263
V
003aab272
T
GS
j
(°C)
(V)
180
4
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