BUK9606-75B,118 NXP Semiconductors, BUK9606-75B,118 Datasheet - Page 11

• Manufacturer Part Number: BUK9606-75B,118
• Description: MOSFET N-CH 75V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9606-75B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 300W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 95nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 75V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0055 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 153 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057114118::BUK9606-75B /T3::BUK9606-75B /T3

NXP Semiconductors
8. Revision history
Table 7.
BUK9606-75B
Product data sheet
Document ID
BUK9606-75B v.3
Modifications:
BUK95_9606_75B v.2
Revision history
Release date
20110207
20020930
•
•
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK9606-75B separated from data sheet BUK95_9606_75B v.2.
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 7 February 2011
Data sheet status
Product data sheet
Product data
Change notice
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-
N-channel TrenchMOS logic level FET
BUK9606-75B
Supersedes
BUK95_9606_75B v.2
BUK95_9606_75B v.1
© NXP B.V. 2011. All rights reserved.
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