BUK9606-75B,118 NXP Semiconductors, BUK9606-75B,118 Datasheet - Page 4
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BUK9606-75B,118
Manufacturer Part Number
BUK9606-75B,118
Description
MOSFET N-CH 75V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK9606-75B118.pdf
(14 pages)
Specifications of BUK9606-75B,118
Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
300W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
95nC @ 5V
Vgs(th) (max) @ Id
2V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
75V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.5 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0055 Ohm @ 10 V
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
153 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057114118::BUK9606-75B /T3::BUK9606-75B /T3
NXP Semiconductors
BUK9606-75B
Product data sheet
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
(A)
I
D
10
10
10
1
3
2
10
−1
Limit R
All information provided in this document is subject to legal disclaimers.
Capped at 75 A due to package
DSon
= V
Rev. 03 — 7 February 2011
1
DS
/I
D
DC
10
N-channel TrenchMOS logic level FET
V
DS
(V)
t
p
BUK9606-75B
= 10 μs
03ng87
100 μs
1 ms
10 ms
100 ms
10
2
© NXP B.V. 2011. All rights reserved.
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