BUK9606-75B,118 NXP Semiconductors, BUK9606-75B,118 Datasheet - Page 9

• Manufacturer Part Number: BUK9606-75B,118
• Description: MOSFET N-CH 75V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9606-75B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 300W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 95nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 75V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0055 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 153 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057114118::BUK9606-75B /T3::BUK9606-75B /T3

NXP Semiconductors
BUK9606-75B
Product data sheet
Fig 13. Gate-source voltage as a function of turn-on
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
V
(V)
GS
5
4
3
2
1
0
gate charge; typical values
0
20
V
DD
= 14 V
40
60
(A)
I
S
100
80
60
40
20
V
0
0.0
DD
80
All information provided in this document is subject to legal disclaimers.
= 60 V
Q
G
03ng80
(nC)
0.2
Rev. 03 — 7 February 2011
100
T
j
0.4
= 175 °C
Fig 14. Input, output and reverse transfer capacitances
(pF)
0.6
C
14000
12000
10000
8000
6000
4000
2000
0
10
as a function of drain-source voltage; typical
values
T
0.8
−1
j
= 25 °C
V
SD
03ng79
C
C
C
(V)
N-channel TrenchMOS logic level FET
iss
oss
rss
1.0
1
BUK9606-75B
10
V
© NXP B.V. 2011. All rights reserved.
DS
(V)
03ng86
10
2
9 of 14