BUK9606-75B,118 NXP Semiconductors, BUK9606-75B,118 Datasheet - Page 3

• Manufacturer Part Number: BUK9606-75B,118
• Description: MOSFET N-CH 75V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9606-75B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 300W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 95nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 75V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0055 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 153 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057114118::BUK9606-75B /T3::BUK9606-75B /T3

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
BUK9606-75B
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
Continuous current is limited by package.
Current is limited by power dissipation chip rating.
(A)
I
D
200
150
100
50
0
mounting base temperature
25
Continuous drain current as a function of
Limiting values
Capped at 75 A due to package
50
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
75
100
125
150
All information provided in this document is subject to legal disclaimers.
175
T
mb
03nh76
(°C)
Rev. 03 — 7 February 2011
200
Conditions
T
R
T
T
see
T
see
T
T
pulsed; t
I
V
D
j
mb
mb
mb
mb
mb
GS
GS
≥ 25 °C; T
= 75 A; V
Figure 3
Figure 3
= 100 °C; V
= 25 °C; V
= 25 °C; pulsed; t
= 25 °C; see
= 25 °C
= 5 V; T
= 20 kΩ
p
Fig 2.
≤ 10 µs; T
sup
j(init)
j
P
(%)
≤ 175 °C
der
120
GS
≤ 75 V; R
80
40
GS
0
= 25 °C; unclamped
Figure 2
function of mounting base temperature
Normalized total power dissipation as a
= 5 V; see
0
= 5 V; see
mb
p
= 25 °C
≤ 10 µs;
GS
N-channel TrenchMOS logic level FET
= 50 Ω;
50
Figure
Figure 1
1;
BUK9606-75B
100
[1]
[2]
[1]
[2]
[1]
Min
-
-
-15
-
-
-
-
-
-55
-55
-
-
-
-
150
© NXP B.V. 2011. All rights reserved.
T
mb
175
175
Max
75
75
15
75
153
75
612
300
153
75
612
852
03na19
(°C)
200
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
mJ
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