BUK9606-75B,118 NXP Semiconductors, BUK9606-75B,118 Datasheet - Page 7

• Manufacturer Part Number: BUK9606-75B,118
• Description: MOSFET N-CH 75V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9606-75B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 300W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 95nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 75V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0055 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 153 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057114118::BUK9606-75B /T3::BUK9606-75B /T3

NXP Semiconductors
BUK9606-75B
Product data sheet
Fig 5.
Fig 7.
(A)
I
D
(A)
I
10
10
10
10
10
10
D
350
300
250
200
150
100
50
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
10
2
5
min
4
1
4
typ
6
V
GS
2
= 3 V
max
2.4
V
All information provided in this document is subject to legal disclaimers.
8
GS
V
DS
(V)
03ng84
03ng53
(V)
Rev. 03 — 7 February 2011
10
3
Fig 6.
Fig 8.
R
(mΩ)
DSon
(S)
g
fs
200
150
100
50
8
7
6
5
4
0
of gate-source voltages; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
0
0
N-channel TrenchMOS logic level FET
20
5
BUK9606-75B
10
40
© NXP B.V. 2011. All rights reserved.
V
I
D
GS
(A)
(V)
03ng83
03ng81
15
60
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