APT20M45BVFRG Microsemi Power Products Group, APT20M45BVFRG Datasheet - Page 2

• Manufacturer Part Number: APT20M45BVFRG
• Description: MOSFET N-CH 200V 56A TO-247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT20M45BVFRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 56A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 195nC @ 10V
• Input Capacitance (ciss) @ Vds: 4860pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1
2
Symbol
Symbol
Symbol
Repetitive Rating: Pulse width limited by maximum junction
temperature.
Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
t
t
I
R
R
C
C
d
d
C
Q
V
dv
Q
RRM
I
Q
Q
(on)
(off)
SM
t
t
I
t
oss
rss
SD
iss
S
rr
gs
gd
/
r
f
JC
rr
JA
g
dt
0.005
0.001
0.05
0.01
0.5
0.1
10
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Junction to Case
Junction to Ambient
S
S
S
-5
= -I
= -I
= -I
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
D
D
D
D=0.5
[Cont.],
[Cont.],
[Cont.],
0.02
0.01
0.05
0.2
0.1
10
di
di
di
/
/
/
-4
dt
dt
dt
SINGLE PULSE
3
= 100A/ s)
= 100A/ s)
= 100A/ s)
dv
1
2
/
dt
(Body Diode)
(V
5
GS
RECTANGULAR PULSE DURATION (SECONDS)
= 0V, I
10
-3
S
= -I
D
[Cont.])
I
I
10
D
D
3
4
5
Test Conditions
= I
= I
-2
V
V
See MIL-STD-750 Method 3471
Starting T
I
V
DD
DD
S
D
D
R
V
V
V
R
f = 1 MHz
V
[Cont.] @ 25 C
[Cont.] @ 25 C
GS
GS
= 200V.
DS
G
GS
= 0.5 V
= 0.5 V
-I
T
T
T
T
T
T
D
= 1.6
j
j
j
j
j
j
= 25V
= 10V
= 15V
= 25 C
= 125 C
= 25 C
= 125 C
= 25 C
= 125 C
= 0V
[Cont.],
j
= +25 C, L = 0.83mH, R
DSS
DSS
10
di
-1
/
dt
= 100A/ s, V
Note:
Peak T J = P DM x Z JC + T C
MIN
MIN
MIN
Duty Factor D =
DD
1.0
t 1
G
= 25 , Peak I
t 2
V
4050
TYP
TYP
TYP
980
300
130
0.7
2.4
DSS
10
18
30
55
12
14
43
7
t 1
, T
/ t 2
j
APT20M45BVFR
150 C, R
4860
1375
MAX
MAX
MAX
0.42
224
200
300
450
195
1.3
L
56
45
80
24
28
70
14
40
5
= 56A
10
G
Amps
Amps
= 2.0 ,
UNIT
UNIT
Volts
UNIT
V/ns
pF
nC
C/W
ns
ns
C