APT5017BVFRG Microsemi Power Products Group, APT5017BVFRG Datasheet - Page 2

• Manufacturer Part Number: APT5017BVFRG
• Description: MOSFET N-CH 500V 30A TO-247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT5017BVFRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 170 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 300nC @ 10V
• Input Capacitance (ciss) @ Vds: 5280pF @ 25V
• Power - Max: 370W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1
2
Symbol
Symbol
Symbol
Repetitive Rating: Pulse width limited by maximum junction
temperature.
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
t
t
I
R
R
C
C
d
d
V
dv
C
Q
Q
RRM
I
Q
Q
(on)
(off)
t
SM
t
I
t
oss
SD
rss
iss
S
rr
gs
gd
/
r
f
JC
JA
g
rr
dt
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Junction to Case
Junction to Ambient
10
S
S
S
-5
= -I
= -I
= -I
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
D
D
D
[Cont.],
[Cont.],
[Cont.],
0.05
0.9
0.7
0.5
0.3
0.1
di
di
di
/
/
/
dt
dt
dt
10
3
= 100A/µs)
= 100A/µs)
= 100A/µs)
-4
dv
1
2
/
dt
(Body Diode)
(V
5
GS
RECTANGULAR PULSE DURATION (SECONDS)
= 0V, I
S
10
= -I
-3
SINGLE PULSE
D
[Cont.])
I
I
D
D
3
4
5
Test Conditions
= I
= I
V
V
See MIL-STD-750 Method 3471
Starting T
I
V
DD
DD
S
D
D
R
V
V
V
f = 1 MHz
V
V
[Cont.] @ 25°C
[Cont.] @ 25°C
DS
GS
GS
= 200V.
GS
= 0.5 V
= 0.5 V
G
-I
T
T
T
T
T
T
D
= 1.6
j
j
j
j
j
j
10
= 25V
= 10V
= 15V
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 0V
[Cont.],
-2
j
= +25°C, L = 2.89mH, R
DSS
DSS
di
/
dt
= 100A/µs, V
Note:
Peak T J = P DM x Z JC + T C
MIN
MIN
MIN
Duty Factor D =
10
-1
DD
t 1
G
= 25 , Peak I
t 2
V
4400
TYP
TYP
TYP
600
230
200
1.6
6.0
DSS
APT5017BVFR_SVFR
13
21
30
80
12
14
55
11
t 1
/ t 2
, T
j
150°C, R
5280
MAX
MAX
MAX
0.34
120
250
525
840
350
300
120
L
1.3
30
45
25
30
80
20
40
1.0
5
= 30A
G
Amps
Amps
UNIT
UNIT
= 2.0 ,
Volts
V/ns
UNIT
°C/W
nC
pF
µC
ns
ns