APT10M09LVFRG Microsemi Power Products Group, APT10M09LVFRG Datasheet - Page 3

• Manufacturer Part Number: APT10M09LVFRG
• Description: MOSFET N-CH 100V 100A TO-264
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT10M09LVFRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 2.5mA
• Gate Charge (qg) @ Vgs: 350nC @ 10V
• Input Capacitance (ciss) @ Vds: 9875pF @ 25V
• Power - Max: 625W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Case temperature. (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.00
1.75
1.50
1.25
1.00
0.75
0.50
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
120
100
100
80
60
40
20
80
60
40
20
0
0
-50
Junction
temp. (°C)
25
0
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
V DS > I D (ON) x R DS (ON)MAX.
V
V
FIGURE 4, TRANSFER CHARACTERISTICS
I
GS
D
GS
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
(watts)
= 50A
-25
Power
= 10V
1
, GATE-TO-SOURCE VOLTAGE (VOLTS)
T
J
50
T
, JUNCTION TEMPERATURE (°C)
C
T J = +125°C
0
, CASE TEMPERATURE (°C)
2
25
75
T J = +25°C
3
T J = -55°C
RC MODEL
50
100
4
0.0302
0.0729
0.0955
75
5
100 125 150
125
6
150
7
0.00809F
0.0182F
0.264F
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
350
300
250
200
150
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
50
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0
-50
-50
0
0
V
V
DS
NORMALIZED TO
GS
FIGURE 5, R
-25
-25
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 10V @ 50A
T
5
I
40
J
D
V GS =20V
T
, JUNCTION TEMPERATURE (°C)
, DRAIN CURRENT (AMPERES)
C
0
0
, CASE TEMPERATURE (°C)
V GS =15V, 10V, & 9V
10
8V
25
DS
25
80
(ON) vs DRAIN CURRENT
15
50
50
120
7V
V GS =10V
75
75
APT10M09B2VFR_LVFR
20
100 125 150
100 125 150
160
6V
25
5V
200
30